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SF1220G 125NT R2905Z 13017 10M25B W503YDT TDA2579A TDA2579A
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 SavantIC Semiconductor
www..com
Product Specification
Silicon PNP Power Transistors
2SB628
DESCRIPTION *With TO-220C package *High VCEO APPLICATIONS *Low frequency power amplifier color TV vertical deflection output
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -1.5 20 150 -45~150 UNIT V V V A W
SavantIC Semiconductor
www..com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-0.1mA; IE=0 IE=-0.1mA; IC=0 IC=-0.3 A;IB=-30m A IC=-0.3A ; VCE=-4V VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-0.3A ; VCE=-5V IC=-0.3A ; VCE=-5V 40 40 MIN -160 -160 -5
2SB628
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT
TYP.
MAX
UNIT V V V
-1.0 -1.0 -1 -1 200
V V A A
MHz
2
SavantIC Semiconductor
www..com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB628
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3


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